(PR) NEO Semiconductor Unveils Breakthrough 1T1C and 3T0C IGZO-Based 3D X-DRAM Technology

07.05.2025 в 16:44,
Hard news

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the latest advancement in its groundbreaking 3D X-DRAM technology family—the ind

ustry-first 1T1C- and 3T0C-based 3D X-DRAM cell, a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications. Built ...

Автор: TheLostSwede
Источник: https://www.techpowerup.com/336479/neo-semiconductor-unveils-breakthrough-1t1c-and-3t0c-igzo-based-3d-x-dram-technology
×