(PR) Fraunhofer, TSRI Partner on Ferroelectric Transistors for Low-Power Memory ICs

Artificial intelligence works fast, but its energy consumption is growing rapidly. A German-Taiwanese research team is now developing a solution: new memory for leading chip technologies smaller than

3 nm. These innovative nanosheet devices enable computing operations directly in memory, thereby drastically reducing energy consumption. They are based on ferroelectric field-effect transistors (FeMF ...