Samsung Reportedly to Use 2 nm Process on HBM4E Base Die

Samsung is reportedly planning to bring its 2 nm process to the base die of HBM4E, its 7th-generation high-bandwidth memory. This comes just a month after the company shipped the industry's first comm

ercial HBM4, and alongside a separate effort to redesign the HBM4E power delivery network to handle the increase in power bumps from 13,682 to 14,457 within the same footprint. Until HBM3, the base di ...