Hafnia Material Breakthrough Paves Way for Ferroelectric Computer Memory

Scientists and engineers have been experimenting with hafnium oxide over the past decade—many believe that this "elusive ferroelectric material" is best leveraged in next generation computin

g memory (due to its non-volatile properties), although this requires a major scientific breakthrough to get working in a practical manner. Hafnia's natural state is inherently non-ferroelectric, so i ...