Scientists and engineers have been experimenting with hafnium oxide over the past decade—many believe that this "elusive ferroelectric material" is best leveraged in next generation computin
g memory (due to its non-volatile properties), although this requires a major scientific breakthrough to get working in a practical manner. Hafnia's natural state is inherently non-ferroelectric, so i ...
Автор: T0@st
Источник: https://www.techpowerup.com/318935/hafnia-material-breakthrough-paves-way-for-ferroelectric-computer-memory